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RTR025P02 MOSFET P-Channel -20V 2.5A 0.07ohm SOT-23 marking TY low on-resistance Built-in G-S Protection Diode
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -2.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.07Ω @-2.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7--2.0V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Features Low On-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT3). |
| 描述与应用 | 低导通电阻。 内置G-S的保护二极管。 小和表面贴装封装（TSMT3） |
