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RTR025P02 MOSFET P-Channel -20V 2.5A 0.07ohm SOT-23 marking TY low on-resistance Built-in G-S Protection Diode

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-2.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.07Ω @-2.5A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.7--2.0V
耗散功率Pd
Power Dissipation		1W
Description & ApplicationsFeatures Low On-resistance. Built-in G-S Protection Diode. Small and Surface Mount Package (TSMT3).
描述与应用低导通电阻。 内置G-S的保护二极管。 小和表面贴装封装（TSMT3）
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