SI2302CDS-T1-GE3 MOSFET N-Channel 20V 2.4A SOT-23/SC-59 marking N2 low on-resistance/low-voltage drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2302CDS-T1-GE3 MOSFET N-Channel 20V 2.4A SOT-23/SC-59 marking N2 low on-resistance/low-voltage drive

Model：SI2302CDS-T1-GE3
Mark / screen / code / typing：N2
Manufacturer：
Date Code：09NOPB 09NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	2.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.115Ω/Ohm @3.1A,2.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.65-1.2V
耗散功率Pd Power Dissipation	900mW/0.9W
Description & Applications	N-Channel 1.25-W, 2.5-V MOSFET
描述与应用	N沟道1.25-W， 2.5 V MOSFET

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