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EMH2412-TL-H Complex FET 24V 6A EMH8 general switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 24V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 13Ω@ VGS = 2.5V, ID = 1mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率Pd Power Dissipation | 1.3W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Halogen free • 2.5V drive • Common drain type |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •无卤 •2.5V驱动 •共漏极类型 |
