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SSM3J317T MOSFET P-Channel -20V -3.6A 0.083ohm SOT-23 marking KDV power managementswitch high-speed switch 1.8V drive low on-resistance
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | -3.6A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.083Ω @-1A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.3--1.0V |
耗散功率Pd Power Dissipation | 700mW/0.7W |
Description & Applications | Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) Ron = 144 mΩ (max) (@VGS = -2.8 V) Ron = 107 mΩ (max) (@VGS = -4.5 V) |
描述与应用 | 电源管理开关应用 ○高速开关应用 •1.8-V驱动器 •低导通电阻:RON =306M(最大)(@ VGS=-1.8 V) 罗恩=144MΩ(最大)(@ VGS=-2.8 V) 罗恩=107MΩ(最大)(@ VGS=-4.5 V) |