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SI1300BDL MOSFET N-Channel 20V 400mA/0.4A SOT-323/SC-70 marking REZ low level threshold
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | 400mA/0.4A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.4-1.0V |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | N-Channel 20-V (D-S) MOSFET TrenchFET Power MOSFET 100 % Rg Tested |
描述与应用 | N沟道20-V(D-S)的MOSFET TrenchFET?功率MOSFET 100%的Rg测试 |