TPCF8B01 complex FET MOSFET+schottky diode -20V -2.7A 1A 0.46V 1206-8/vs-8 marking F8A low Rds/low leakage current/low forward voltage|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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TPCF8B01 complex FET MOSFET+schottky diode -20V -2.7A 1A 0.46V 1206-8/vs-8 marking F8A low Rds/low leakage current/low forward voltage

Model：TPCF8B01
Mark / screen / code / typing：F8A
Manufacturer：
Date Code：07nopb 12+ROHS
Package：1206-8/vs-8/SOT23-8
Standard Package：4000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	P沟道 P-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	-20V
最大漏极电流Id Drain Current	8V
源漏极导通电阻Rds Drain-Source On-State Resistance	-2.7A
开启电压Vgs（th） Gate-Source Threshold Voltage	110mΩ@ VGS = -4.5V, ID = -1.4mA
耗散功率Pd Power Dissipation	-0.5~-1.2V
Description & Applications	肖特基二极管SBD Schottky Barrier Diodes
描述与应用	20V

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