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CPH6424-TL-E MOSFET N-Channel 60V 3A SOT-163/SOT23-6/CPH6 marking ZA high density battery designvery low RDS(ON)

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20v
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.145Ω/Ohm @1.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation1.6W
Description & Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
描述与应用•低导通电阻。 •超高速开关。 •2V驱动
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