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SI3495DV MOSFET P-Channel -20V -7A 0.020ohm SOT-163 marking 95P power MOSFET ultra low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.020Ω @-7A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.35V-0.75V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | •根据IEC 61249-2-21的无卤素 定义 •的TrenchFET 功率MOSFET：1.5 V额定 •超低导通电阻 •100％的Rg 测试 •符合RoHS指令2002/95/EC |
