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HD1L2Q NPN Bipolar Digital Transistor (BRT) 80V 1A 0.47k 4.7k gain200-300 SOT-89/SC-62 marking LT High current drives IC output
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 基极输入电阻R1 Input Resistance(R1) | 0.47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | 200-300 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | FEATURES • High current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive |
| 描述与应用 | 特性 •高电流驱动IC输出和执行器等 •片上偏置电阻 •低功耗在运行时 |
