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UP01213GOLBF NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=80 R1=R2=47KΩ SOT-563 marking 9L switch and digital circuit application
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V |
| Collector Current(IC) Q1/Q2 | 100mA |
| Q1 Input Resistance(R1) | 47KΩ |
| Q1 Base-Emitter Resistance(R2) | 47KΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 47KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| (R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | 80/80 |
| Transtion Frequency(fT) Q1/Q2 | 150MHZ/150MHZ |
| Power Dissipation Q1/Q2 | 125MW/0.125W |
| Description & Applications | Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half. |
