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MTM6841109SO Complex FET -12V -4.8A 1206-8/vs-8 marking 1D load switch 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-8V
最大漏极电流Id
Drain Current		-4.8A
源漏极导通电阻Rds
Drain-Source On-State Resistance		60mΩ@ VGS = -1.8V, ID = -200mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.3~-1V
耗散功率Pd
Power Dissipation		1W
Description & ApplicationsFor load switch circuits For switching circuits Feature Dual P-channel MOS FET in one package Low drive voltage:1.8V drive
描述与应用对于负载开关电路 对于开关电路 特点 双P沟道MOS场效应管在一个封装中 低驱动电压：1.8V驱动
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