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UNR5225GOL NPN Bipolar Digital Transistor (BRT) 30V 600mA/0.6A 10k SOT-323/SC-70 digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)30V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)20V
集电极连续输出电流IC Collector Current(IC)600mA/0.6A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)100
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsSilicon NPN epitaxial planar type For muting ■ Features • Low collector-emitter saturation voltage VCE(sat) optimum for the muting circuit • The use with high current value is possible
描述与应用NPN硅外延平面型 用于静音 ■特性 •低集电极 - 发射极饱和电压VCE 最佳的噪声抑制电路 •高电流值的使用是可能的
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