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UNR92A1G08SO NPN Bipolar Digital Transistor (BRT) 50V 80mA 10K 10K sot-523 marking FK digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)80mA
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)35
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.125W/125mW
Description & ApplicationsSilicon NPN epitaxial planar type For digital circuits Features Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption
描述与应用NPN硅外延平面型 用于数字电路 特性 高密度设备的安装和精简优化 低功耗做出贡献
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