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MA2Z7850GL SBD Schottky Barrier Diodes 50V 100mA/0.1A 550mV/0.55V SOD323/SC-76/USC/0805 marking 2e fast switch low forward voltage
| 反向电压Vr Reverse Voltage | 50V |
| 平均整流电流Io AVerage Rectified Current | 100mA/0.1A |
| 最大正向压降VF Forward Voltage(Vf) | 550mV/0.55V |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super-high speed switching circuit • For small current rectification • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV)= 100 mA) condition • Optimum for high-frequency rectification because of its shortreverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed |
| 描述与应用 | •肖特基势垒二极管（SBD） •硅外延平面型 •超高速开关电路 •小电流整流 •S-迷你型2引脚封装，允许高密度安装 •允许下，以纠正（IF（AV）=100 mA时）条件 •最适用于高频整流，快速反向恢复时间。 •低VF（正向电压上升），整流效率高 •反向电压VR（DC值）=50 V |
