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2SD2210GRL NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 200~350 130mV/0.13V SOT-89/SC-62 marking 1KR low voltageoutput amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
200~350
管压降VCE(sat)
Collector-Emitter Saturation Voltage
130mV/0.13V
耗散功率Pc
Power Dissipation
1W
Description & Applicationsapplications Silicon NPN epitaxial planer type *For low-voltage output amplification *For muting *For DC-DC converter Features *Low collector to emitter saturation voltage VCE(sat) *Low ON resistance Ron *High foward current transfer ratio hFE.
描述与应用应用: NPN硅外延平面型 *低电压输出放大 *静音 *用于DC-DC转换器 特点: *低集电极到发射极饱和电压VCE(SAT)低管压降 *低导通电阻Ron *高电流增益HFE。
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