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2SD2210GRL NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 200~350 130mV/0.13V SOT-89/SC-62 marking 1KR low voltageoutput amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~350 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 130mV/0.13V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | applications Silicon NPN epitaxial planer type *For low-voltage output amplification *For muting *For DC-DC converter Features *Low collector to emitter saturation voltage VCE(sat) *Low ON resistance Ron *High foward current transfer ratio hFE. |
| 描述与应用 | 应用： NPN硅外延平面型 *低电压输出放大 *静音 *用于DC-DC转换器 特点： *低集电极到发射极饱和电压VCE（SAT）低管压降 *低导通电阻Ron *高电流增益HFE。 |
