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UP0121EGOL NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=60 R1=47KΩ R2=22KΩ SOT-553 marking AQ switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA
Q1基极输入电阻R1 Input Resistance(R1) 47KΩ
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ
Q1电阻比(R1/R2) Q1 Resistance Ratio 2.14
Q2基极输入电阻R1 Input Resistance(R1) 47KΩ
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 22KΩ
Q2电阻比(R1/R2) Q2 Resistance Ratio 2.14
直流电流增益hFE DC Current Gain(hFE) 60
截止频率fT Transtion Frequency(fT) 150mhz
耗散功率Pc Power Dissipation 125mw
Description & Applications Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half.
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