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2SA2015 PNP transistors(BJT) -30V -8A 290MHz 200~560 -340mV/-0.34V SOT-89/PCP marking AV DC-DCconvertor/relay driver
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC Collector Current(IC) | -8A |
截止频率fT Transtion Frequency(fT) | 290MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~560 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -340mV/-0.34V |
耗散功率Pc PoWer Dissipation | 600mW/0.6W |
Description & Applications | PNP Silicon epitaxial Transistor For DC-DC converter applications Applications Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation. |
描述与应用 | PNP硅外延晶体管 DC-DC转换器应用 应用 继电器驱动器,灯驱动器,电机驱动器,闪光灯。 特点 通过MBIT流程。 大电流容量。 低集电极 - 发射极饱和电压。 高速开关。 集小型和超薄超小尺寸封装允许应用。 高允许功耗。 |