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2SC4738FV-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 100mV/0.1V SOT-723/VESM marking LG radio general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
150mA/0.15A |
| 截止频率fT Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc Power Dissipation |
150mW/0.15W |
| Description & Applications | Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) •Audio Frequency General Purpose Amplifier Applications •High Voltage: VCEO = 50 V •High Current: IC = 150 mA (max) •High hFE: hFE = 120 ~ 400 •Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) •Complementary to 2SA1832FV |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延式（PCT程序） •音频通用放大器应用 •高电压：VCEO= 50 V •高电流：IC=150 mA（最大） •高HFE：HFE=120〜400 •优秀的HFE线性：HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）=0.95（典型值） •2SA1832FV互补 |
