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2SC5344SFY NPN Transistors(BJT) 35V 800mA/0.8A 120MHz 100~200 <500mV/0.5V SOT-23/SC-59 marking FAY radiopower amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
截止频率fT Transtion Frequency(fT) | 120MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | <500mV/0.5V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | NPN SILICON TRANSISTOR Description • Audio power amplifier application Features • High hFE : hFE=100~320 |
描述与应用 | NPN硅晶体管 描述 •音频功率放大器中的应用 特点 •高HFE:HFE=100〜320 |