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SI3433DV-T1-E3 MOSFET P-Channel -20V -4.3A 80mohm SOT-163 marking 3A

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-4.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
80mΩ@ VGS = -1.8V, ID = -1A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
1.1W
Description & ApplicationsP-Channel 1.8-V (G-S) MOSFET
描述与应用P沟道1.8-V(G-S)的MOSFET
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