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BCW32 NPN Transistors(BJT) 32V 100mA/0.1A 100MHz 200~454 250mV/0.25V SOT-23/SC-59 marking d2 generalswitch and amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 32V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~452 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. |
| 描述与应用 | NPN通用放大器 •本设备是专为通用应用集电极 电流为300mA。 •来源于过程10。 |
