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MMBT5210 NPN Transistors(BJT) 50V 100mA/0.1A 30MHz 200~600 700mV/0.7V SOT-23/SC-59 marking 3M low noise，high gain ，general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~600 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 700mV/0.7V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. |
| 描述与应用 | NPN通用放大器 该设备是专为低噪声，高增益，通用 放大器应用集电极电流1μA到50毫安。 |
