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RRQ045P03 MOSFET P-Channel -30V -4.5A 53mohm SOT-153 marking UB low on-resistance high power package high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-4.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
53mΩ@ VGS = -4V, ID = -2.2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1~-2.5V
耗散功率Pd
Power Dissipation
1.25W
Description & Applications4V Drive Pch MOSFET Features 1) Low On-resistance. 2) High Power Package. 3) High speed switching. Application Switching
描述与应用4V驱动P沟道MOSFET 特点 1)低导通电阻。 2)高功率封装。 3)高速开关。 应用 开关
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