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RRQ045P03 MOSFET P-Channel -30V -4.5A 53mohm SOT-153 marking UB low on-resistance high power package high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -4.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 53mΩ@ VGS = -4V, ID = -2.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1~-2.5V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 4V Drive Pch MOSFET Features 1) Low On-resistance. 2) High Power Package. 3) High speed switching. Application Switching |
| 描述与应用 | 4V驱动P沟道MOSFET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 应用 开关 |
