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ISA1235 PNP transistors（BJT） -60V -200mA/-0.2A 200MHz 150~500 -300mV/-0.3V SOT-23/SC-59 marking MF Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 150~500 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP epitaxial planar transistor For low frequency amplifier application Feature Excellent linearity of DC current gain Small collector to emitter saturation voltage |
| 描述与应用 | PNP外延平面晶体管 对于低频放大器中的应用 特点 直流电流增益，出色的线性度 小集电极到发射极饱和电压 |
