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DRA2114E0L PNP transistors（BJT） -50V -100mA/-0.1A 35 -250mV/-0.25V SOT-23/SC-59 marking LB low collector emitter saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 35 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | For digital circuits Complementary to DRC2114E Features Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
| 描述与应用 | 数字电路 互补DRC2114E的 特点 低集电极 - 发射极饱和电压VCE（sat） 有助于集小型化，减少元件数量 |
