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HN3C01F NPN+NPN Complex Bipolar Transistor 30V 50mA HEF=40~300 SOT-163/SM6/SOT-26 marking WA switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 30V

V(BR) CEO

Collector-Emitter Voltage

 20V
Collector Current(IC)  50MA
Transtion Frequency(fT)  1400MHZ
DC Current Gain(hFE)  40~300

VCE (sat)

Collector-Emitter Saturation Voltage

 
Power Dissipation (Pd)  300MW/0.3W
Description & Applications

 Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SM6(super mini type with 6 leads) • High transition Frequency

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