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AF2301PWLA MOSFET P-Channel -20V -2.3A 0.095ohm SOT-23 marking 016L low on-resistance high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -2.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.095Ω @-2.8A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.45V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package |
| 描述与应用 | 先进沟道工艺技术 高密度电池设计超低导通电阻 优良的热性能和电气性能 紧凑，低姿态SOT-23封装 |
