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APM2301CAC MOSFET P-Channel -20V -2.8A 0.085ohm SOT-23 marking C01B battery-powered equipment notebook battery management
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -2.8A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.085Ω @-2A,-2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1V |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | P-Channel Enhancement Mode MOSFET -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V Super High Dense Cell Design Reliable and Rugged |
| 描述与应用 | P沟道增强型MOSFET -20V/-2.8A RDS（ON）=56mW（典型值）@ VGS=-4.5V RDS（ON）=85mW（典型值）@ VGS=-2.5V RDS（ON）=106mW（典型值）@ VGS=-1.8V 超级高密度电池设计 可靠耐用 |
