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BC848B NPN Transistors(BJT) 30V 100mA/0.1A 250MHz 200~450 200~600 mV SOT-23/SC-59 marking 1K generalswitch and amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅晶体管自动对焦 •AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压，低管压降 •低噪音之间30 Hz和15千赫 •互补类型： BC856-BC860（PNP） |
