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BCW60RC NPN Transistors(BJT) 32V 100mA/0.1A 125MHz 175~350 350mV/0.35V SOT-23/SC-59 marking AR
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 32V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 32V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 125MHz |
直流电流增益hFE DC Current Gain(hFE) | 175~350 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 350mV/0.35V |
耗散功率Pc Power Dissipation | 300mW/0.3W |
Description & Applications | general purpose transistor NPN Silicon |
描述与应用 | 通用晶体管 NPN硅 |