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STS3401 MOSFET P-Channel -30V -3A 0.075ohm SOT-23 marking T01 low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.075Ω @-3A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--2.5V
耗散功率Pd
Power Dissipation		1.25W
Description & ApplicationsF E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT -23 P ackage.
描述与应用ŞUPER高密度电池设计低R D（ON）。 ŗugged可靠。 S OT-23包装
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