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MMBT3906LT1 PNP transistors（BJT） -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2A high DC current gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon Switching Transistor • High DC current gain • Low collector-emitter saturation voltage • Complementary to MMBT3904 |
| 描述与应用 | PNP硅开关晶体管 •高直流电流增益 •低集电极 - 发射极饱和电压 •互补型MMBT3904 |
