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BSP220 MOSFET P-Channel -200V -225mA 10ohm SOT-223 marking BSP220 high-speed switch no secondary breakdown
| 最大源漏极电压Vds Drain-Source Voltage | -200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.225A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 10Ω @-200mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.8V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, • High-speed switching • No secondary breakdown |
| 描述与应用 | •非常低的RDS（on） •直接连接C-MOS，TTL， •高速开关 •无二次击穿 |
