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BFS483 NPN+NPN Complex Bipolar Transistor 20V 65mAhef= 50~200 SOT-363 marking RH switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
20V |
|
V(BR) CEO Collector-Emitter Voltage |
20V |
| Collector Current(IC) | 65MA |
| Transtion Frequency(fT) | 8GHZ |
| DC Current Gain(hFE) | 50~200 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
|
| Power Dissipation （Pd） | 0.45w |
| Description & Applications | NPN Silicon RF Transistor
For low-noise, high-gain broadband amplifier
at collector currents from 2 mA to 28 mA
fT = 8 GHz
F = 1.2 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
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| Technical Documentation Download | Read Online |
