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2SK3272-01S-TE24R MOSFET N-Channel 60V 8A TO-263 marking SK3272 low on-resistance/high-speed switch/no secondary breakdown/low drive power
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V/-20V |
| 最大漏极电流Id Drain Current | 8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.005Ω/Ohm @40A,40V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.5-3.5V |
| 耗散功率Pd Power Dissipation | 135W |
| Description & Applications | Trench Gate MOSFET Motor Control General Purpose Power Amplifier DC-DC converters Features Trench Gate MOSFET High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated |
| 描述与应用 | 沟槽栅MOSFET 电机控制 通用功率放大器 DC-DC转换器 特性 沟槽栅MOSFET 高电流 低导通电阻 无二次击穿 低驱动功率 雪崩额定 |
