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MMBTA56LT1 PNP transistors(BJT) -80V -500mA/-0.5A 50MHz 100 -250mV/-0.25V SOT-23/SC-59 marking GM

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−80V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
50MHz
直流电流增益hFE
DC Current Gain(hFE)
100
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsDriver PNP Silicon Transistors Features • Pb−Free Package is Available
描述与应用驱动PNP硅晶体管 特点 •无铅包装是可用
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