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IRF5801TRPBF MOSFET N-Channel 600mA/0.6A SOT-163/TSOP-6 marking low Rds
最大源漏极电压Vds Drain-Source Voltage | |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 600mA/0.6A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.2Ω@ VGS = 10V, ID =360mA |
开启电压Vgs(th) Gate-Source Threshold Voltage | 3~5.5V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | Applications High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, Fully Characterized Avalanche Voltage and Current |
描述与应用 | 应用 高频DC-DC转换器 优点 低栅极漏极电荷降低开关损耗 电容的全部特性,包括有效的COSS为了简化设计, 充分界定雪崩电压和电流 |