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PMSTA06 NPN Transistors(BJT) 80V 500mA/0.5A 100MHz 50 250mV/0.25V SOT-323/SC-70 marking t1G

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • Primarily intended for telephony and professional communication equipment. DESCRIPTION NPN transistor in a SOT323 plastic package.
描述与应用特点 •高电流(最大500毫安) •低电压(最大80 V)。 应用 •主要用于电话和专业 通信设备。 说明 NPN晶体管在SOT323塑料包装。
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