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BCW66KH NPN Transistors(BJT) 75V 800mA/0.8A 170MHz 100~250 450mV/0.45V SOT-23/SC-59 marking EHs
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 75V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 800mA/0.8A |
| 截止频率fT Transtion Frequency(fT) | 170MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 450mV/0.45V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | NPN Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary type: BCW68 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅晶体管自动对焦 •高电流增益 •低集电极 - 发射极饱和电压 •互补类型：BCW68（PNP） •无铅（符合RoHS）包1） •符合AEC Q101 |
