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2N7002ET1G MOSFET N-Channel 60V 260mA/0.26A SOT-23/SC-59 marking 703 low Rds

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Product description
最大源漏极电压Vds Drain-Source Voltage 60V
最大栅源极电压Vgs(±) Gate-Source Voltage 20V
最大漏极电流Id Drain Current 260mA/0.26A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.86Ω/Ohm @240mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2.5V
耗散功率Pd Power Dissipation 300mW/0.3W
Description & Applications SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small surface mounting type. (SC-70/SOT-323) High density cell design for low RDS(ON). Suitable for high packing density.
描述与应用 表面贴装 N沟道增强型场效应晶体管 特性 N沟道增强型场效应晶体管 小型表面贴装型。 (SC-70/SOT-323) 高密度单元设计的低漏源导通电阻)。 适用于高包装密度。
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