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SSM5817SLPT SBD Schottky Barrier Diodes 20V 1A 450mV/0.45V SOD-123/1206 marking S2 low forward voltage
反向电压Vr Reverse Voltage | 20V |
平均整流电流Io AVerage Rectified Current | 1A |
最大正向压降VF Forward Voltage(Vf) | 450mV/0.45V |
最大耗散功率Pd Power dissipation | |
Description & Applications | • For surface mounted applications •Low profile package •Metal silicon junction, majority carrier conduction • Low power loss, high efficiency •High current capability, low forward voltage drop •High surge capability |
描述与应用 | •对于表面安装应用 •薄型包装 •金属硅交界处,大部分载波传导 •低功耗,高效率 •高电流能力,低正向压降 •高浪涌能力 |