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2SK1931 MOSFET N-Channel 200V 5A TO-252/D-PAK marking K1931 highspeed power/low on-resistance/fast switch/Low drive current

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Product description
最大源漏极电压Vds Drain-Source Voltage200V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.45Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2-4V
耗散功率Pd Power Dissipation20W
Description & ApplicationsN-Channel Enhancement type Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive
描述与应用N沟道增强型 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动
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