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2SK1931 MOSFET N-Channel 200V 5A TO-252/D-PAK marking K1931 highspeed power/low on-resistance/fast switch/Low drive current
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.45Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-4V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | N-Channel Enhancement type Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 | N沟道增强型 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |
