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MMUN2213LT1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 47k 47k gain80-140 SOT-23/SC-59 marking 8C ESD protection
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 80-140 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features • Simplifies Circuit Design • Reduces Board Space and Component Count • The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the13 inch/10,000 unit reel. |
| 描述与应用 | 特性 •简化电路设计 •缩小板级空间和元件数量 •SOT-23封装，可以使用波或回流焊接。修改后的鸥翅引线在焊接热应力吸收消除模具损坏的可能性。 •可在8 mm压纹带和卷轴。使用的设备 号码编排7 inch/3000的单位卷轴。替换“T1” “T3”的设备号编排13 inch/10，000单位卷轴。 |
