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SSM6P16FE Complex FET -20V -100mA/-0.1A SOT-563/ES6 marking DT high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -100mA/-0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 8Ω@ VGS = -4V, ID = -10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.6~-1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 高速开关应用 模拟开关应用 •小型封装 •低导通电阻：RON= 8Ω（最大）（@ VGS=-4 V） ：R0N= 12Ω（最大）（@ VGS= -2.5 V） ：R0N上= 45Ω（最大值）（@ VGS=-1.5 V） |
