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UP0450100ASO NPN+NPN Complex Bipolar Transistor 60V 0.1A HEF=180~390 SOT-563 marking 5H switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
60V |
V(BR) CEO Collector-Emitter Voltage |
50V |
Collector Current(IC) | 0.1A |
Transtion Frequency(fT) | 150MHZ |
DC Current Gain(hFE) | 180~390 |
VCE (sat) Collector-Emitter Saturation Voltage |
0.3V |
Power Dissipation (Pd) | 125MW/0.125W |
Description & Applications | Silicon NPN epitaxial planar type
For general amplification
■ Features
• Two elements incorporated into one package
(Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD0601A × 2
|
Technical Documentation Download | Read Online |