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HM669A NPN Transistors(BJT) 180V 1.5A 140MHz 100~200 1V SOT-89 marking H669A low frequency power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 1.5A |
| 截止频率fT Transtion Frequency(fT) | 140MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | NPN EPITAXIAL PLANAR TRANSISTOR Low frequency power amplifier complementary pair with HM649A |
| 描述与应用 | NPN外延平面晶体管 低频功率放大器 对管HM649A |
