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BSV52 NPN Transistors(BJT) 20V 100mA/0.1A 500MHz 40~120 400mV/0.4V SOT-23/SC-59 marking B2 switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | 400MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. |
| 描述与应用 | NPN开关晶体管 该设备是专为高速饱和开关 集电极电流10 mA至100 mA的。 |
