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KRC658E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 0.2W R1=22KΩ R2=47KΩ 200MHZ SOT-553/TESV marking NI switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 0.1A |
| Input Resistance(R1) | 22KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.468 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 0.2W |
| Description & Applications | EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
* With Built-in Bias Resistors.
* Simplify Circuit Design.
* Reduce a Quantity of Parts and Manufacturing Process.
* High Packing Density.
|
| Technical Documentation Download | Read Online |
