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KRC658E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 0.2W R1=22KΩ R2=47KΩ 200MHZ SOT-553/TESV marking NI switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  0.1A
Input Resistance(R1)  22KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.468
DC Current Gain(hFE)  
Transtion Frequency(fT)  200MHZ
Power Dissipation (Pd)  0.2W
Description & Applications  EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. 
FEATURES 
* With Built-in Bias Resistors.
* Simplify Circuit Design.
* Reduce a Quantity of Parts and Manufacturing Process.
* High Packing Density.
Technical Documentation Download Read Online
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