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2SD2623GTL NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 400~800 140mV/0.14V SOT-323/SC-70 marking 2VT low-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 200MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 400~800 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 140mV/0.14V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type For low-frequency amplification Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于低频放大 特点 •低导通电阻Ron •S-迷你型包装，让精简的设备和通过自动插入磁带包装 |
