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UP04211 Complex Bipolar Transistor 50V 0.1A HEF=35 R1=R2=10KΩ MARKING 9V
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 35 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 125MW |
| Description & Applications | For switching/digital circuits
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
|
| Technical Documentation Download | Read Online |
